Siliup SP40N01AGMT

Siliup · FETs & Power MOSFETs · MPN SP40N01AGMT

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Specifications

Gate Charge(Qg)98nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)400A
Output Capacitance(Coss)3.55nF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation327W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)0.7mΩ@10V;1.2mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)7.3nF

Technical details

40V 400A 1.7V 327W 1 N-channel STOLL Single FETs, MOSFETs RoHS

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