Siliup SP35N120CTF

Siliup · FETs & Power MOSFETs · MPN SP35N120CTF

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Specifications

Drain to Source Voltage1.2kV
Gate Charge(Qg)124nC
Output Capacitance(Coss)121pF
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation327W
Reverse Transfer Capacitance (Crss@Vds)8pF
RDS(on)60mΩ
Number1 N-channel
Input Capacitance(Ciss)2.56nF
TypeN-Channel

Technical details

1.2kV 65A 4V 327W 60mΩ 1 N-channel N-Channel TO-247-3L Single FETs, MOSFETs RoHS

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