Siliup SP3416KT1

Siliup · FETs & Power MOSFETs · MPN SP3416KT1

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)8nC@4.5V
Output Capacitance(Coss)105pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation1.4W
Reverse Transfer Capacitance (Crss@Vds)89pF
RDS(on)13mΩ@4.5V;17mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)545pF

Technical details

N-Channel 20V 7A 1.4W Surface Mount SOT-23-3L

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