Siliup SP3400T2

Siliup · FETs & Power MOSFETs · MPN SP3400T2

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Specifications

Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)18nC@10V
Output Capacitance(Coss)68pF
Current - Continuous Drain(Id)5.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation350mW
Reverse Transfer Capacitance (Crss@Vds)53pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)765pF

Technical details

30V 5.8A 350mW Surface Mount SOT-23

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