Siliup SP30P30T1

Siliup · FETs & Power MOSFETs · MPN SP30P30T1

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)116pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)112pF
RDS(on)30mΩ@10V;45mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)850pF
TypeP-Channel

Technical details

P-Channel 30V 5A 1.3W Surface Mount SOT-23-3L

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