Siliup SP30P25T1

Siliup · FETs & Power MOSFETs · MPN SP30P25T1

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Specifications

Output Capacitance(Coss)130pF
Pd - Power Dissipation1.4W
Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)7.8nC@4.5V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)93pF
RDS(on)25mΩ@10V;36mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)870pF

Technical details

P-Channel 30V 7A 1.4W Surface Mount SOT-23-3L

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