Siliup SP30P25NQ

Siliup · FETs & Power MOSFETs · MPN SP30P25NQ

No reviews yet — be the first to review Siliup SP30P25NQ.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)116pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
RDS(on)25mΩ@10V;36mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)112pF
Number1 P-Channel
Input Capacitance(Ciss)850pF
TypeP-Channel

Technical details

P-Channel 30V 6.5A 2W Surface Mount PDFN-6L(2x2)

Related FETs & Power MOSFETs