Siliup SP30P16NQ

Siliup · FETs & Power MOSFETs · MPN SP30P16NQ

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)16mΩ@10V;20mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.36nF
TypeP-Channel

Technical details

P-Channel 30V 8.5A 3W Surface Mount PDFN-6L(2x2)

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