Siliup SP30P13TH

Siliup · FETs & Power MOSFETs · MPN SP30P13TH

No reviews yet — be the first to review Siliup SP30P13TH.

Specifications

Output Capacitance(Coss)350pF
Pd - Power Dissipation35W
Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)30nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)13mΩ@10V;22mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.6nF

Technical details

P-Channel 30V 30A 35W Surface Mount TO-252-2L

Related FETs & Power MOSFETs