Siliup SP30P13P8

Siliup · FETs & Power MOSFETs · MPN SP30P13P8

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation3.1W
RDS(on)13mΩ@10V;16mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)300pF
Number1 P-Channel
Input Capacitance(Ciss)1.6nF

Technical details

30V 11A 3.1W Surface Mount SOP-8L

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