Siliup SP30P11P8

Siliup · FETs & Power MOSFETs · MPN SP30P11P8

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Specifications

Output Capacitance(Coss)300pF
Pd - Power Dissipation3.2W
Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)25nC@10V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)11mΩ@10V;17mΩ@4.5V
Number-
Input Capacitance(Ciss)1.915nF

Technical details

P-Channel 30V 12A 3.2W Surface Mount SOP-8L

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