Siliup SP30P08DP8

Siliup · FETs & Power MOSFETs · MPN SP30P08DP8

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Specifications

Gate Charge(Qg)48nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)8mΩ@10V;11mΩ@4.5V
Number2 P-Channel
Input Capacitance(Ciss)2.9nF
TypeP-Channel

Technical details

P-Channel 30V 12A 2W Surface Mount SOP-8L

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