Siliup SP30P03TH

Siliup · FETs & Power MOSFETs · MPN SP30P03TH

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Specifications

Gate Charge(Qg)120nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)859pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation65W
RDS(on)3.4mΩ@10V;4.8mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)650pF
Number1 P-Channel
Input Capacitance(Ciss)5.7nF
TypeP-Channel

Technical details

P-Channel 30V 100A 65W Surface Mount TO-252

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