Siliup SP30N20TQ

Siliup · FETs & Power MOSFETs · MPN SP30N20TQ

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Specifications

Output Capacitance(Coss)125pF
Pd - Power Dissipation170W
Configuration-
Gate Charge(Qg)34nC
Drain to Source Voltage200V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
RDS(on)82mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)23pF
Number1 N-channel
Input Capacitance(Ciss)1.567nF

Technical details

170W 200V 3V 82mΩ@10V 1 N-channel N-Channel TO-220-3L Single FETs, MOSFETs RoHS

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