Siliup SP30N16NQ

Siliup · FETs & Power MOSFETs · MPN SP30N16NQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)5nC@4.5V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.8W
RDS(on)16mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)51pF
Number1 N-channel
Input Capacitance(Ciss)416pF

Technical details

N-Channel 30V 8A 1.8W Surface Mount DFN-6L(2x2)

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