Siliup SP30N10NQ

Siliup · FETs & Power MOSFETs · MPN SP30N10NQ

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)9.6nC@4.5V
Output Capacitance(Coss)131pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)109pF
RDS(on)9.5mΩ@10V;14mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)940pF

Technical details

30V 12A 2.5W Surface Mount DFN-6L(2x2)

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