Siliup SP30N10DNJ

Siliup · FETs & Power MOSFETs · MPN SP30N10DNJ

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Specifications

Gate Charge(Qg)9.6nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)131pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation15W
Reverse Transfer Capacitance (Crss@Vds)109pF
RDS(on)10mΩ@10V;15mΩ@4.5V
Number2 N-Channel
Input Capacitance(Ciss)940pF

Technical details

N-Channel Array 30V 12A 15W Surface Mount PDFNWB-8L-B(3.3x3.3)

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