Siliup SP30N03ATH

Siliup · FETs & Power MOSFETs · MPN SP30N03ATH

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Specifications

Output Capacitance(Coss)369pF
Pd - Power Dissipation55W
Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)44nC@10V
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Reverse Transfer Capacitance (Crss@Vds)289pF
RDS(on)2.8mΩ@10V;5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.068nF

Technical details

N-Channel 30V 110A 55W Surface Mount TO-252

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