Siliup SP30N02TD

Siliup · FETs & Power MOSFETs · MPN SP30N02TD

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Specifications

Output Capacitance(Coss)558pF
Pd - Power Dissipation95W
Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)70nC@10V
Current - Continuous Drain(Id)165A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Reverse Transfer Capacitance (Crss@Vds)453pF
RDS(on)1.9mΩ@10V;3mΩ@4.5V
Number-
Input Capacitance(Ciss)4.5nF

Technical details

N-Channel 30V 165A 95W Surface Mount TO-263

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