Siliup SP30N02BTH

Siliup · FETs & Power MOSFETs · MPN SP30N02BTH

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)75nC@10V
Output Capacitance(Coss)456pF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation63W
Reverse Transfer Capacitance (Crss@Vds)388pF
RDS(on)2.7mΩ@10V;4.7mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.55nF

Technical details

N-Channel 30V 120A 63W Surface Mount TO-252-2L

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