Siliup SP30N02BNJ

Siliup · FETs & Power MOSFETs · MPN SP30N02BNJ

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Specifications

Output Capacitance(Coss)456pF
Pd - Power Dissipation28W
Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)75nC@10V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Reverse Transfer Capacitance (Crss@Vds)388pF
RDS(on)2.5mΩ@10V;4.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.55nF

Technical details

N-Channel 30V 80A 28W Surface Mount PDFN-8L(3x3)

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