Siliup SP30N02AGNK

Siliup · FETs & Power MOSFETs · MPN SP30N02AGNK

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)36nC@10V
Output Capacitance(Coss)770pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation85W
RDS(on)1.9mΩ@10V;3mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)16pF
Number1 N-channel
Input Capacitance(Ciss)2.19nF
TypeN-Channel

Technical details

N-Channel 30V 100A 85W Surface Mount PDFN-8L(5x6)

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