Siliup SP30N01LGNP

Siliup · FETs & Power MOSFETs · MPN SP30N01LGNP

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Specifications

Output Capacitance(Coss)1.537nF
Pd - Power Dissipation130W
Gate Charge(Qg)52nC
Configuration-
Drain to Source Voltage30V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.7V
RDS(on)0.95mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)45pF
Number1 N-channel
Input Capacitance(Ciss)3.062nF

Technical details

130W 30V 1.7V 0.95mΩ@10V 1 N-channel N-Channel PDFN-8L(5x6) Single FETs, MOSFETs RoHS

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