Siliup SP30N01GTQ

Siliup · FETs & Power MOSFETs · MPN SP30N01GTQ

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Specifications

Gate Charge(Qg)92nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.832nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation180W
Reverse Transfer Capacitance (Crss@Vds)101pF
RDS(on)1.65mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.451nF
TypeN-Channel

Technical details

N-Channel 30V 160A 180W Through Hole TO-220-3L

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