Siliup SP30N01GNP

Siliup · FETs & Power MOSFETs · MPN SP30N01GNP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)62nC@10V
Current - Continuous Drain(Id)265A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation156W
RDS(on)1.6mΩ@4.5V
Number1 N-channel
TypeN-Channel

Technical details

N-Channel 30V 265A 156W Surface Mount PDFN5x6-8L

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