Siliup SP30N01BGNK

Siliup · FETs & Power MOSFETs · MPN SP30N01BGNK

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Specifications

Gate Charge(Qg)95nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.662nF
Current - Continuous Drain(Id)120A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)197pF
RDS(on)1.2mΩ@10V;1.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.997nF
TypeN-Channel

Technical details

N-Channel 30V 120A 105W Surface Mount PDFN-8L(5x6)

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