Siliup SP30N01ATO

Siliup · FETs & Power MOSFETs · MPN SP30N01ATO

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)160nC@10V
Output Capacitance(Coss)1.219nF
Current - Continuous Drain(Id)210A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation120W
RDS(on)0.8mΩ@10V;1.2mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)851pF
Number1 N-channel
Input Capacitance(Ciss)9.262nF
TypeN-Channel

Technical details

N-Channel 30V 210A 120W Surface Mount TOLL-8L

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