Siliup · FETs & Power MOSFETs · MPN SP30N01AGHNP
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 98nC@10V |
| Output Capacitance(Coss) | 3.6nF |
| Current - Continuous Drain(Id) | 415A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 160pF |
| RDS(on) | 0.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.2nF |
30V 415A 3V 200W 0.75mΩ@10V 1 N-channel DFN-8L(5x6) Single FETs, MOSFETs RoHS