Siliup SP30N01AATO

Siliup · FETs & Power MOSFETs · MPN SP30N01AATO

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)230nC@10V
Output Capacitance(Coss)1.619nF
Current - Continuous Drain(Id)290A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation320W
Reverse Transfer Capacitance (Crss@Vds)1.551nF
RDS(on)0.6mΩ@10V;0.9mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)13.862nF
TypeN-Channel

Technical details

N-Channel 30V 290A 320W Surface Mount TOLL-8L

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