Siliup SP3033CNJ

Siliup · FETs & Power MOSFETs · MPN SP3033CNJ

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Specifications

Gate Charge(Qg)1nC@10V;13nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)45pF;116pF
Current - Continuous Drain(Id)7A;8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation10W
Reverse Transfer Capacitance (Crss@Vds)17pF;112pF
RDS(on)28mΩ@10V;42mΩ@4.5V;30mΩ@10V;45mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)235pF;850pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 8A 10W Surface Mount PDFNWB-8L(3.3x3.3)

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