Siliup SP3012CP8

Siliup · FETs & Power MOSFETs · MPN SP3012CP8

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Specifications

Gate Charge(Qg)9.6nC@4.5V;21nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)131pF;146pF
Current - Continuous Drain(Id)9A;8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)109pF;142pF
RDS(on)11mΩ@10V;21mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)940pF;1.07nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 30V 9A 2W Surface Mount SOP-8L

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