Siliup SP3011ACNK

Siliup · FETs & Power MOSFETs · MPN SP3011ACNK

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Specifications

Gate Charge(Qg)32nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)367pF
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)297pF
RDS(on)11mΩ@10V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)1.65nF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel Array 30V 29A 33W Surface Mount PDFN-8L(5x6)

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