Siliup SP2N80TH

Siliup · FETs & Power MOSFETs · MPN SP2N80TH

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Specifications

Drain to Source Voltage800V
Configuration-
Gate Charge(Qg)9.6nC@10V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation87W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)4.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)380pF

Technical details

800V 2A 87W Surface Mount TO-252

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