Siliup · FETs & Power MOSFETs · MPN SP2N10T2A
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| Gate Charge(Qg) | 7nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 25pF |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 1.15W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 220mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 360pF |
100V 2A 1.5V 1.15W 220mΩ@10V 1 N-channel SOT-23 Single FETs, MOSFETs RoHS