Siliup · FETs & Power MOSFETs · MPN SP2N10LT2
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| Output Capacitance(Coss) | 25pF |
|---|---|
| Pd - Power Dissipation | 1W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 6nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 230mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 310pF |
1W 100V 1.6V 230mΩ@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS