Siliup SP25N50TQ

Siliup · FETs & Power MOSFETs · MPN SP25N50TQ

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Specifications

Gate Charge(Qg)63nC@10V
Configuration-
Drain to Source Voltage500V
Output Capacitance(Coss)217pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation270W
RDS(on)210mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)3.468nF

Technical details

N-Channel 500V 25A 270W Through Hole TO-220-3L-C

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