Siliup · FETs & Power MOSFETs · MPN SP2333BT1
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| Gate Charge(Qg) | 4.5nC@2.5V |
|---|---|
| Drain to Source Voltage | 16V |
| Current - Continuous Drain(Id) | 4A |
| Output Capacitance(Coss) | 290pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 1.2W |
| RDS(on) | 23mΩ@4.5V;31mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 190pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 740pF |
16V 4A 650mV 1.2W 1 P-Channel SOT-23-3L Single FETs, MOSFETs RoHS