Siliup SP2319T2

Siliup · FETs & Power MOSFETs · MPN SP2319T2

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)9nC@10V
Output Capacitance(Coss)52pF
Current - Continuous Drain(Id)3.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation900mW
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)65mΩ@10V;85mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)520pF

Technical details

40V 3.2A 900mW Surface Mount SOT-23

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