Siliup SP2302BT2

Siliup · FETs & Power MOSFETs · MPN SP2302BT2

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)2.8nC@4.5V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)2.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))800mV
Pd - Power Dissipation500mW
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)45mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)277pF

Technical details

N-Channel 20V 2.1A 500mW Surface Mount SOT-23

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