Siliup SP2301T2

Siliup · FETs & Power MOSFETs · MPN SP2301T2

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)3.5nC@2.5V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)78pF
RDS(on)60mΩ@4.5V;80mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)545pF
TypeP-Channel

Technical details

P-Channel 20V 3A 1W Surface Mount SOT-23

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