Siliup SP2301BT2

Siliup · FETs & Power MOSFETs · MPN SP2301BT2

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)6.5nC@2.5V
Output Capacitance(Coss)62pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))750mV
Pd - Power Dissipation400mW
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)95mΩ@4.5V;120mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)327pF

Technical details

P-Channel 20V 2A 400mW Surface Mount SOT-23

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