Siliup SP2102CT3

Siliup · FETs & Power MOSFETs · MPN SP2102CT3

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Specifications

Drain to Source Voltage20V
Configuration-
Gate Charge(Qg)4nC@4.5V
Output Capacitance(Coss)35pF
Current - Continuous Drain(Id)1.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation280mW
Reverse Transfer Capacitance (Crss@Vds)21pF
RDS(on)60mΩ@4.5V;70mΩ@2.5V
Number1 N-channel
Input Capacitance(Ciss)226pF

Technical details

N-Channel 20V 1.8A 280mW Surface Mount SOT-323

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