Siliup · FETs & Power MOSFETs · MPN SP2101T3
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| Drain to Source Voltage | 20V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 3.3nC@2.5V |
| Output Capacitance(Coss) | 120pF |
| Current - Continuous Drain(Id) | 1.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 350mW |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| RDS(on) | 65mΩ@4.5V;85mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 640pF |
P-Channel 20V 1.4A 350mW Surface Mount SOT-323