Siliup SP2101CT3

Siliup · FETs & Power MOSFETs · MPN SP2101CT3

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Specifications

Output Capacitance(Coss)58pF
Pd - Power Dissipation290mW
Configuration-
Gate Charge(Qg)6.5nC@2.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)1.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
RDS(on)110mΩ@4.5V;140mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)49pF
Number1 P-Channel
Input Capacitance(Ciss)485pF

Technical details

P-Channel 20V 1.2A 290mW Surface Mount SOT-323

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