Siliup · FETs & Power MOSFETs · MPN SP2101CT3
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| Output Capacitance(Coss) | 58pF |
|---|---|
| Pd - Power Dissipation | 290mW |
| Configuration | - |
| Gate Charge(Qg) | 6.5nC@2.5V |
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 1.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| RDS(on) | 110mΩ@4.5V;140mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 485pF |
P-Channel 20V 1.2A 290mW Surface Mount SOT-323