Siliup SP2101BT3

Siliup · FETs & Power MOSFETs · MPN SP2101BT3

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Specifications

Gate Charge(Qg)3.5nC@2.5V
Drain to Source Voltage20V
Output Capacitance(Coss)136pF
Current - Continuous Drain(Id)1.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1W
RDS(on)80mΩ@4.5V;95mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)78pF
Number1 P-Channel
Input Capacitance(Ciss)545pF
TypeP-Channel

Technical details

P-Channel 20V 1.3A 1W Surface Mount SOT-323

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