Siliup · FETs & Power MOSFETs · MPN SP20P35TS
No reviews yet — be the first to review Siliup SP20P35TS.
| Drain to Source Voltage | 20V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 9.7nC@4.5V |
| Output Capacitance(Coss) | 90.8pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 750mV |
| Pd - Power Dissipation | 2.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 80.4pF |
| RDS(on) | 35mΩ@4.5V;45mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 686pF |
P-Channel 20V 4A 2.8W Surface Mount SOT-23-6L