Siliup · FETs & Power MOSFETs · MPN SP20P35T2
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| Drain to Source Voltage | 20V |
|---|---|
| Configuration | - |
| Gate Charge(Qg) | 13.6nC@4.5V |
| Output Capacitance(Coss) | 127pF |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 113pF |
| RDS(on) | 57mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 960pF |
20V 4.5A 900mV 1.7W 57mΩ@4.5V 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS