Siliup · FETs & Power MOSFETs · MPN SP20P25T2
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 9.4nC@4.5V |
| Current - Continuous Drain(Id) | 5.5A |
| Output Capacitance(Coss) | 127pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 650mV |
| Pd - Power Dissipation | 1.1W |
| RDS(on) | 25mΩ@4.5V;30mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 96pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 960pF |
| Type | P-Channel |
20V 5.5A 650mV 1.1W 1 P-Channel P-Channel SOT-23 Single FETs, MOSFETs RoHS