Siliup SP20P18T1

Siliup · FETs & Power MOSFETs · MPN SP20P18T1

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)32nC@4.5V
Output Capacitance(Coss)191pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.3W
Reverse Transfer Capacitance (Crss@Vds)151pF
RDS(on)18mΩ@4.5V;28mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.258nF
TypeP-Channel

Technical details

P-Channel 20V 7A 1.3W Surface Mount SOT-23-3L

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