Siliup · FETs & Power MOSFETs · MPN SP20N50TQ
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 46nC@10V |
| Drain to Source Voltage | 500V |
| Output Capacitance(Coss) | 220pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 350mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.62nF |
500V 20A 4V 190W 350mΩ@10V 1 N-channel N-Channel TO-220-3L-C Single FETs, MOSFETs RoHS